IN-SITU X-RAY REFLECTIVITY STUDY OF THE OXIDATION-KINETICS OF LIQUID GALLIUM AND THE LIQUID ALLOY GA0.93HG0.07

The low-temperature oxidation kinetics of liquid Ga and the liquid all oy Ga0.93Hg0.07 has been investigated by means of in situ x-ray specul ar reflectivity. A combination of angle-dispersive and energy-dispersi ve measurements was used to obtain a time resolution of 20 minutes wit h a sealed-tube reflectometer. allowing us ro follow the growth of a n atural oxide layer for 1 to 170 hours following preparation of a fresh surface. Oxide layer thicknesses between 10 and 30 Angstrom were meas ured for Ga at 103 degrees C and the liquid alloy at 83 degrees C, 107 degrees C and 122 degrees C. The oxidation was found to follow a loga rithmic growth law in all cases.