A. Plech et al., IN-SITU X-RAY REFLECTIVITY STUDY OF THE OXIDATION-KINETICS OF LIQUID GALLIUM AND THE LIQUID ALLOY GA0.93HG0.07, Journal of physics. Condensed matter, 10(5), 1998, pp. 971-982
The low-temperature oxidation kinetics of liquid Ga and the liquid all
oy Ga0.93Hg0.07 has been investigated by means of in situ x-ray specul
ar reflectivity. A combination of angle-dispersive and energy-dispersi
ve measurements was used to obtain a time resolution of 20 minutes wit
h a sealed-tube reflectometer. allowing us ro follow the growth of a n
atural oxide layer for 1 to 170 hours following preparation of a fresh
surface. Oxide layer thicknesses between 10 and 30 Angstrom were meas
ured for Ga at 103 degrees C and the liquid alloy at 83 degrees C, 107
degrees C and 122 degrees C. The oxidation was found to follow a loga
rithmic growth law in all cases.