Singlemode operation of first-order GaInP/AlGaInP DBR lasers at 635 nm
is reported. The lasers were realised by one-step epitaxy and post-ep
itaxial structuring of surface gratings. The lasers with DBR grating p
eriods between 97 and 100nm show stable singlemode operation in the wa
velength range 633.5-647.4nm at room temperature and-an be operated at
up to 50 degrees C.