GATE CURRENT ANALYSIS OF LT-GAAS PASSIVATED MESFETS

Authors
BOUDART B GAQUIERE C THERON D
Citation
B. Boudart et al., GATE CURRENT ANALYSIS OF LT-GAAS PASSIVATED MESFETS, Electronics Letters, 33(17), 1997, pp. 1496-1498
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
17
Year of publication
1997
Pages
1496 - 1498
Database
ISI
SICI code
0013-5194(1997)33:17<1496:GCAOLP>2.0.ZU;2-E
Abstract
The gate current of LT-GaAs passivated MESFETs has been analysed, For the first time, the bell shape of this current is not due to an ionisa tion mechanism. Moreover, the electrical properties of the LT-GaAs mat erial are observed to change with polarisation conditions, This phenom enon has been confirmed by electrical measurements performed at differ ent temperatures.