HIGH-POWER CONTINUOUS AND QUASI-CONTINUOUS WAVE INGAASP INP BROAD-WAVE-GUIDE SEPARATE CONFINEMENT-HETEROSTRUCTURE MULTIQUANTUM-WELL DIODE-LASERS/

Authors
GARBUZOV DZ MENNA RJ MARTINELLI RU ABELES JH CONNOLLY JC
Citation
Dz. Garbuzov et al., HIGH-POWER CONTINUOUS AND QUASI-CONTINUOUS WAVE INGAASP INP BROAD-WAVE-GUIDE SEPARATE CONFINEMENT-HETEROSTRUCTURE MULTIQUANTUM-WELL DIODE-LASERS/, Electronics Letters, 33(19), 1997, pp. 1635-1636
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
19
Year of publication
1997
Pages
1635 - 1636
Database
ISI
SICI code
0013-5194(1997)33:19<1635:HCAQWI>2.0.ZU;2-S
Abstract
The application of the broad-waveguide concept to InGaAsP/InP diode la sers has resulted in a fourfold reduction in internal loss to 1.3cm(-1 ) while achieving a record low threshold current of 73A/cm(2) per quan tum well. Output powers of 5.2W continuous wave and 10W quasi-continuo us wave are demonstrated for 200 mu m-aperture lasers emitting at 1.43 mu m.