10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/

Authors
HURM V BENZ W BRONNER W DAMMANN M JAKOBUS T KAUFEL G KOHLER K LAO Z LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M
Citation
V. Hurm et al., 10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/, Electronics Letters, 33(19), 1997, pp. 1653-1654
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
19
Year of publication
1997
Pages
1653 - 1654
Database
ISI
SICI code
0013-5194(1997)33:19<1653:1SLPPG>2.0.ZU;2-Y
Abstract
The first long wavelength pin-HEMT photoreceiver grown on GaAs has bee n manufactured using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.55 mu m the monolithically integrated InGaAs pin photodiode has a responsivity of 0.40A/W, and the photoreceiver has a -3dB bandwidth of 6.9GHz. Clear and open eye diagrams for a 10Gbit/s 1 .5 mu m optical data stream have been demonstrated.