OBSERVATION OF SPECTRAL HOLE-BURNING IN PHOTOCURRENT SPECTRUM OF INASSELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN PIN DIODE

Authors
SUGIYAMA Y NAKATA Y MUTO S HORIGUCHI N FUTATSUGI T AWANO Y YOKOYAMA N
Citation
Y. Sugiyama et al., OBSERVATION OF SPECTRAL HOLE-BURNING IN PHOTOCURRENT SPECTRUM OF INASSELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN PIN DIODE, Electronics Letters, 33(19), 1997, pp. 1655-1657
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
19
Year of publication
1997
Pages
1655 - 1657
Database
ISI
SICI code
0013-5194(1997)33:19<1655:OOSHIP>2.0.ZU;2-I
Abstract
The spectral hole burning of InAs self-assembled quantum dots (QDs) em bedded in a pin diode has been observed for the first time. The spectr al hole depth increases as the electric field is increased. By numeric al fitting to experimental results, the possibility of wavelength-doma in multiplicity in optical memory by using InAs QDs is shown.