SUBMILLIAMP 1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH THRESHOLD CURRENT-DENSITY OF LESS-THAN-500A CM(2)/

Authors
QIAN Y ZHU ZH LO YH HUFFAKER DL DEPPE DG HOU HQ HAMMONS BE LIN W TU YK
Citation
Y. Qian et al., SUBMILLIAMP 1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH THRESHOLD CURRENT-DENSITY OF LESS-THAN-500A CM(2)/, Electronics Letters, 33(12), 1997, pp. 1052-1054
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
12
Year of publication
1997
Pages
1052 - 1054
Database
ISI
SICI code
0013-5194(1997)33:12<1052:S1VSLW>2.0.ZU;2-G
Abstract
High performance 1.3 mu m vertical-cavity surface-emitting lasers (VCS ELs) using oxygen implantation in wafer-bonded GaAs/AlGaAs mirrors are demonstrated. A record low threshold current density of 454A/cm(2) an d a threshold current of 0.83mA have been achieved for pulsed operatio n at 20 degrees C. The maximum CW and pulsed operating temperatures ar e 40 and 112 degrees C, respectively.