A high speed 2:1 selector-driver IC developed for external laser modul
ation is presented. ?he IC delivers a maximum output voltage swing of
2.2V(pp) at 30Gbit/s on a 50 Omega load. The circuit was fabricated in
a laboratory InP/InGaAs double heterojunction bipolar transistor tech
nology with F-t similar or equal to 56GHz and F-max similar or equal t
o 43GHz.