HIGH-POWER 630 NM BAND LASER-DIODES WITH STRAIN-COMPENSATED SINGLE-QUANTUM-WELL ACTIVE LAYER

Authors
HIROYAMA R UETANI T BESSHO Y SHONO M SAWADA M IBARAKI A
Citation
R. Hiroyama et al., HIGH-POWER 630 NM BAND LASER-DIODES WITH STRAIN-COMPENSATED SINGLE-QUANTUM-WELL ACTIVE LAYER, Electronics Letters, 33(12), 1997, pp. 1084-1086
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
12
Year of publication
1997
Pages
1084 - 1086
Database
ISI
SICI code
0013-5194(1997)33:12<1084:H6NBLW>2.0.ZU;2-N
Abstract
High power 630nm band AlGaInP laser diodes with a strain-compensated s ingle quantum well active layer have been successfully fabricated. The highest output power achieved was 72mW. High power operation of 30mW was obtained at up to 75 degrees C; reliable operation was achieved fo r more than 1000h under 30mW at 50 degrees C.