LOCALIZED IMPURITY-INDUCED LAYER DISORDERING FOR LITHOGRAPHIC CONTROLOF THE LATERAL OXIDATION OF ALAS

Authors
MASSENGALE AR UEDA T HARRIS JS TAI CY DEAL MD PLUMMER JD FERNANDEZ R
Citation
Ar. Massengale et al., LOCALIZED IMPURITY-INDUCED LAYER DISORDERING FOR LITHOGRAPHIC CONTROLOF THE LATERAL OXIDATION OF ALAS, Electronics Letters, 33(12), 1997, pp. 1087-1089
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
12
Year of publication
1997
Pages
1087 - 1089
Database
ISI
SICI code
0013-5194(1997)33:12<1087:LILDFL>2.0.ZU;2-F
Abstract
The lateral oxidation of AlAs is becoming an important processing tool , but has proven difficult to control. A method is presented to achiev e lithographic control of the lateral oxidation process. The technique uses impurity induced layer disordering in buried, heavily Si-doped l ayers to locally change the oxidation rate of an AlAs layer. Several t ypes of capping conditions during the anneal are discussed.