THRESHOLD REDUCTION OF P-TYPE DELTA-DOPED INGAAS GAAS QUANTUM-WELL LASERS BY USING AUTO-DOPING OF CARBON/

Authors
HATORI N MIZUTANI A NISHIYAMA N KOYAMA F IGA K
Citation
N. Hatori et al., THRESHOLD REDUCTION OF P-TYPE DELTA-DOPED INGAAS GAAS QUANTUM-WELL LASERS BY USING AUTO-DOPING OF CARBON/, Electronics Letters, 33(12), 1997, pp. 1096-1097
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
12
Year of publication
1997
Pages
1096 - 1097
Database
ISI
SICI code
0013-5194(1997)33:12<1096:TROPDI>2.0.ZU;2-O
Abstract
An InGaAs/GaAs quantum well laser using p-type delta-doping selectivel y in the barriers has been demonstrated to reduce the threshold curren t and carrier lifetime. A delta-doping technique is proposed, based on the experimental evidence of high density carbon inclusion during AlA s growth by metal organic chemical vapour deposition (MOCVD). A thresh old current density as low as 160A/cm(2) (54A/cm(2)/well), has been ob tained for three quantum well stripe lasers grown at 1.7 x 10(18) cm(- 3) carbon doping.