FORWARD BODY-BIAS SRAM CIRCUITRY ON BULK SI WITH TWIN DOUBLE-WELL

Authors
KIOI K KAKIMOTO S SATO Y
Citation
K. Kioi et al., FORWARD BODY-BIAS SRAM CIRCUITRY ON BULK SI WITH TWIN DOUBLE-WELL, Electronics Letters, 33(23), 1997, pp. 1929-1931
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
23
Year of publication
1997
Pages
1929 - 1931
Database
ISI
SICI code
0013-5194(1997)33:23<1929:FBSCOB>2.0.ZU;2-P
Abstract
A novel SRAM cell suitable for low-voltage adiabatic logic is proposed . This cell uses forward body-bias effects, which are controlled by th e stored data, to prevent a passgate transistor from turning on when a large source-to-drain voltage exists.