INFLUENCE OF OXYGEN STOICHIOMETRY ON RAMAN PHONON SPECTROSCOPY, LATTICE-PARAMETERS AND PHYSICAL-PROPERTIES OF LA0.7CA0.3MNO3 THIN-FILMS

Authors
MALDE N DESILVA PSIPN HOSSAIN AKMA COHEN LF THOMAS KA MACMANUSDRISCOLL JL MATHUR ND BLAMIRE MG
Citation
N. Malde et al., INFLUENCE OF OXYGEN STOICHIOMETRY ON RAMAN PHONON SPECTROSCOPY, LATTICE-PARAMETERS AND PHYSICAL-PROPERTIES OF LA0.7CA0.3MNO3 THIN-FILMS, Solid state communications, 105(10), 1998, pp. 643-648
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
105
Issue
10
Year of publication
1998
Pages
643 - 648
Database
ISI
SICI code
0038-1098(1998)105:10<643:IOOSOR>2.0.ZU;2-#
Abstract
In this study the influence of annealing at reduced oxygen pressure on electrical transport, Raman active phonon modes and structural proper ties of several La0.7Ca0.3MnO3 thin films has been determined. The out -of-plane lattice parameters and some of the Raman phonon modes were f ound to be insensitive to oxygenation condition. The temperature at wh ich the peak magnetoresistance occurs and other of the Raman phonon mo des, are found to change continuously as a function of decreasing oxyg en partial pressure. The Raman studies indicate that small variations of oxygen content induce a structural change. (C) 1998 Elsevier Scienc e Ltd.