N. Malde et al., INFLUENCE OF OXYGEN STOICHIOMETRY ON RAMAN PHONON SPECTROSCOPY, LATTICE-PARAMETERS AND PHYSICAL-PROPERTIES OF LA0.7CA0.3MNO3 THIN-FILMS, Solid state communications, 105(10), 1998, pp. 643-648
In this study the influence of annealing at reduced oxygen pressure on
electrical transport, Raman active phonon modes and structural proper
ties of several La0.7Ca0.3MnO3 thin films has been determined. The out
-of-plane lattice parameters and some of the Raman phonon modes were f
ound to be insensitive to oxygenation condition. The temperature at wh
ich the peak magnetoresistance occurs and other of the Raman phonon mo
des, are found to change continuously as a function of decreasing oxyg
en partial pressure. The Raman studies indicate that small variations
of oxygen content induce a structural change. (C) 1998 Elsevier Scienc
e Ltd.