PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/

Authors
BULMAN GE DOVERSPIKE K SHEPPARD ST WEEKS TW KONG HS DIERINGER HM EDMOND JA BROWN JD SWINDELL JT SCHETZINA JF
Citation
Ge. Bulman et al., PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/, Electronics Letters, 33(18), 1997, pp. 1556-1557
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
18
Year of publication
1997
Pages
1556 - 1557
Database
ISI
SICI code
0013-5194(1997)33:18<1556:POLIAC>2.0.ZU;2-Y
Abstract
Room temperature pulsed-operation lasing has been achieved for the fir st time in an InGaN laser grown on a 6H-SiC substrate, The laser struc ture is an 8-well InGaN/GaN MQW having Al0.06Ga0.94N waveguide and Al0 .13Ga0.87N cladding layers. The index-guided laser having uncoated cle aved facets emits at 402nm with a threshold current I-th of 1.2A (42V) , corresponding to a current density of 48kA/cm(2). A narrow line widt h of 0.8 Angstrom is observed at 1.09 I-th. Far field measurements ind icate that the devices operate in the TEM01 mode with FWHP of 5.7 and 19 degrees for the in-plane and perpendicular directions, respectively .