20GBIT S MONOLITHIC PHOTORECEIVER CONSISTING OF A WAVE-GUIDE PIN PHOTODIODE AND HEMT DISTRIBUTED-AMPLIFIER/

Authors
TAKAHATA K MURAMOTO Y FUKANO H KATO K KOZEN A NAKAJIMA O KIMURA S IMAI Y
Citation
K. Takahata et al., 20GBIT S MONOLITHIC PHOTORECEIVER CONSISTING OF A WAVE-GUIDE PIN PHOTODIODE AND HEMT DISTRIBUTED-AMPLIFIER/, Electronics Letters, 33(18), 1997, pp. 1576-1577
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
18
Year of publication
1997
Pages
1576 - 1577
Database
ISI
SICI code
0013-5194(1997)33:18<1576:2SMPCO>2.0.ZU;2-G
Abstract
A monolithic photoreceiver OEIC for lambda = 1.55 mu m consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplif ier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 2OGHz and operates at 20Gbit/s with a sen sitivity of -10.4dBm.