K. Takahata et al., 20GBIT S MONOLITHIC PHOTORECEIVER CONSISTING OF A WAVE-GUIDE PIN PHOTODIODE AND HEMT DISTRIBUTED-AMPLIFIER/, Electronics Letters, 33(18), 1997, pp. 1576-1577
A monolithic photoreceiver OEIC for lambda = 1.55 mu m consisting of a
waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplif
ier has been fabricated using a single-step MOVPE growth technique. It
has a 3dB-down frequency of 2OGHz and operates at 20Gbit/s with a sen
sitivity of -10.4dBm.