TRAVELING-WAVE DUAL-GATE MESFET - A MULTIMODE S-MATRIX DERIVATION BASED ON THE QUASI-STATIC APPROACH

Authors
BENHABILES MT BENGHALIA A LASSOUED S BERRABAH M
Citation
Mt. Benhabiles et al., TRAVELING-WAVE DUAL-GATE MESFET - A MULTIMODE S-MATRIX DERIVATION BASED ON THE QUASI-STATIC APPROACH, INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(1), 1998, pp. 11-19
Citations number
15
Categorie Soggetti
Computer Science Interdisciplinary Applications","Engineering, Eletrical & Electronic","Computer Science Interdisciplinary Applications
Journal title
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING → ACNP
ISSN journal
10964290
Volume
8
Issue
1
Year of publication
1998
Pages
11 - 19
Database
ISI
SICI code
1096-4290(1998)8:1<11:TDM-AM>2.0.ZU;2-X
Abstract
A theoretical model of the dual-gate MESFET including electromagnetic propagation effects is presented. The quasistatic approach is induced by the presence of a constant volumic charge density in the depletion layer when the device operates under the slow-wave Schottky mode. Devi ce features are analyzed, through its S-parameter variation vs. electr ode length, frequency, loading impedances, and bias voltages. We found that the different propagating mode attenuation factors are determine d principally by the conductor losses. (C) 1998 John Wiley & Sons, Inc .