GAN BASED LEDS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
GRANDJEAN N MASSIES J LORENZINI P LEROUX M
Citation
N. Grandjean et al., GAN BASED LEDS GROWN BY MOLECULAR-BEAM EPITAXY, Electronics Letters, 33(25), 1997, pp. 2156-2157
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
25
Year of publication
1997
Pages
2156 - 2157
Database
ISI
SICI code
0013-5194(1997)33:25<2156:GBLGBM>2.0.ZU;2-T
Abstract
GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-ty pe doping levels are 4x10(18) and 3x10(17) cm(-3), respectively. LEDs turn on at 3V, and the forward voltage is 3.7V at 20mA. The electrolum inescence peaks at 390 nm.