EFFECT OF INTERACTING RESONANCES ON DIELECTRONIC RECOMBINATION IN STATIC FIELDS

We find that the static field enhancement of dielectronic recombinatio n may be strongly reduced by the interaction between resonances throug h common continue. The interaction effect is not limited to a few reso nances but extends over whole n manifolds, thus it can significantly r educe the field enhancement of the total recombination rate. The stand ard lowest order theory is recast using a complex Hamiltonian to inclu de higher order tenus usually identified with interaction through comm on continua. We present calculations for C3+ and Si11+ using both time independent and time dependent configuration average methods.