BROAD-BAND MICROWAVE AND OPTOELECTRONIC DEVICES DESIGN BY THE REAL FREQUENCY TECHNIQUE

Citation
A. Perennec et al., BROAD-BAND MICROWAVE AND OPTOELECTRONIC DEVICES DESIGN BY THE REAL FREQUENCY TECHNIQUE, INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(2), 1998, pp. 142-155
Citations number
24
Categorie Soggetti
Computer Science Interdisciplinary Applications","Engineering, Eletrical & Electronic","Computer Science Interdisciplinary Applications
ISSN journal
10964290
Volume
8
Issue
2
Year of publication
1998
Pages
142 - 155
Database
ISI
SICI code
1096-4290(1998)8:2<142:BMAODD>2.0.ZU;2-P
Abstract
This paper presents microwave and optoelectronic devices designed by t he real frequency method. These devices are broadband multistage ampli fiers, low noise amplifiers, active filters, ultra-broadband amplifier s with resistive matching networks, active one-ports for differential structures, laser command circuits, and transimpedance amplifiers. The advantages of the real frequency method are as follows. First, the ma thematical formalism is simple and presents no approximations in the v arious stages of the procedure design. Second, especially for matching networks that constitute distributed elements, this method gives, aft er the optimization process, several syntheses. Indeed, for a given nu mber of transmission lines and stubs, the synthesis procedure gives al l the possible combinations, with their associated different character istic impedances. So, according to the chosen technology (microstrip o r uniplanar, for example), the feasibility of the different characteri stic impedances will be taken into account to chose the best synthesis . (C) 1998 John Wiley & Sons. Inc.