LOW-THRESHOLD GAINP ALGAINP RIDGE-WAVE-GUIDE LASERS/

Authors
KUHN J GENG C SCHOLZ F SCHWEIZER H
Citation
J. Kuhn et al., LOW-THRESHOLD GAINP ALGAINP RIDGE-WAVE-GUIDE LASERS/, Electronics Letters, 33(20), 1997, pp. 1707-1708
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
20
Year of publication
1997
Pages
1707 - 1708
Database
ISI
SICI code
0013-5194(1997)33:20<1707:LGARL>2.0.ZU;2-I
Abstract
The authors have fabricated low-threshold 670nm GaInP/AlGaInP ridge wa veguide lasers based on a combined dry-and wet-etching technique. Mini mum CW threshold currents of 10.4mA with a differential quantum effici ency of 72% have been obtained for a 2 mu m wide and 200 mu m long tri ple quantum well laser. A maximum output power of 23mW per facet is ac hieved for this uncoated device. Single transverse mode operation is o bserved for output powers of up to 14mW per facet.