PHOTOLUMINESCENCE FROM SIGE SI QUANTUM DOTS WITH WAVELENGTH IN THE VISIBLE RANGE/

Citation
Fy. Huang et al., PHOTOLUMINESCENCE FROM SIGE SI QUANTUM DOTS WITH WAVELENGTH IN THE VISIBLE RANGE/, Electronics Letters, 33(20), 1997, pp. 1736-1737
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
33
Issue
20
Year of publication
1997
Pages
1736 - 1737
Database
ISI
SICI code
0013-5194(1997)33:20<1736:PFSSQD>2.0.ZU;2-W
Abstract
Photoluminescence from Si0.7Ge0.3/Si quantum dots with a wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricat ed by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminesc ence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperatur e with its intensity similar to 40% of that at 4.2 K.