Photoluminescence from Si0.7Ge0.3/Si quantum dots with a wavelength in
the visible range is reported. The SiGe/Si quantum dots were fabricat
ed by electron beam lithography and reactive ion etching of an SiGe/Si
superlattice. A photoluminescence spectrum was obtained between 4.2 K
and room temperature. As the temperature increased, the photoluminesc
ence intensity decreased, with the peak position shifting slightly to
a higher energy. The photoluminescence persisted up to room temperatur
e with its intensity similar to 40% of that at 4.2 K.