JUNCTION INFLUENCE ON DRAIN CURRENT TRANSIENTS IN PARTIALLY-DEPLETED SOI MOSFETS

A model and a numerical-simulation-based demonstration of source and d rain junction influence on drain current transients in floating-body p artially-depleted (PD) SOI MOSFETs are presented. The investigated tra nsient regime is a Zerbst-type one. It is shown that the junction cont ribution strongly influences carrier generation processes and therefor e affects the accuracy of generation lifetime evaluation when the tran sistor channel length is reduced. In SOI MOSFETs, the thorough investi gation of the contribution of generation processes is essentially two- dimensional.