4.8 MW SINGLEMODE OXIDE CONFINED TOP-SURFACE EMITTING VERTICAL-CAVITYLASER-DIODES

Authors
JUNG C JAGER R GRABHERR M SCHNITZER P MICHALZIK R WEIGL B MULLER S EBELING KJ
Citation
C. Jung et al., 4.8 MW SINGLEMODE OXIDE CONFINED TOP-SURFACE EMITTING VERTICAL-CAVITYLASER-DIODES, Electronics Letters, 33(21), 1997, pp. 1790-1791
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
21
Year of publication
1997
Pages
1790 - 1791
Database
ISI
SICI code
0013-5194(1997)33:21<1790:4MSOCT>2.0.ZU;2-W
Abstract
The authors have optimised MBE-grown GaAs VCSELs emitting at a wavelen gth of 840 nm for maximum singlemode output power. Devices of 3.51 mu m diameter show a record high singlemode CW output power of 4.8 mW and a butt-coupling efficiency into singlemode fibre of > 80%.