HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/

Authors
TAYAHI MB DUTTA NK HOBSON WS VAKHSHOORI D LOPATA J WYNN J
Citation
Mb. Tayahi et al., HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/, Electronics Letters, 33(21), 1997, pp. 1794-1795
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
21
Year of publication
1997
Pages
1794 - 1795
Database
ISI
SICI code
0013-5194(1997)33:21<1794:HIGSL>2.0.ZU;2-8
Abstract
The fabrication and performance characteristics of a vertical cavity s urface emitting laser design which uses lateral current injection for low resistance and lateral oxidation for carrier confinement is descri bed. The 4 mu m diameter devices have a threshold current of similar t o 1.5 mA and emit few mW. The 50 mu m diameter devices have a threshol d current of similar to 200 mA and emit similar to 250 mW in a single wavelength. The lasers emit at near 1 mu m.