SINGLE SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR RESISTIVE-FUSE APPLICATIONS/

Authors
WU KH FANG YK HO JJ CHEN TJ HWANG JD
Citation
Kh. Wu et al., SINGLE SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR RESISTIVE-FUSE APPLICATIONS/, Electronics Letters, 33(21), 1997, pp. 1824-1825
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
21
Year of publication
1997
Pages
1824 - 1825
Database
ISI
SICI code
0013-5194(1997)33:21<1824:SSSHND>2.0.ZU;2-R
Abstract
A novel resistive-fuse with near ideal current-voltage characteristics has been successfully implemented by using a single SiC/Si heterostru cture negative-differential-resistance (NDR) diode. This novel resisti ve-fuse possesses several advantages, including its simple structure a nd fabrication process, very low current levels in off-operation, and the potential for high-temperature operation.