6-PARAMETER DC GAAS-FET MODEL FOR NONLINEAR CIRCUIT SIMULATION

Authors
CAO J LIN F KOOI PS LEONG MS
Citation
J. Cao et al., 6-PARAMETER DC GAAS-FET MODEL FOR NONLINEAR CIRCUIT SIMULATION, Electronics Letters, 33(21), 1997, pp. 1825-1827
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
21
Year of publication
1997
Pages
1825 - 1827
Database
ISI
SICI code
0013-5194(1997)33:21<1825:6DGMFN>2.0.ZU;2-V
Abstract
By emphasising the aspects of simplicity and accuracy for GaAs FET mod elling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained.