TUNABLE OPTICAL DOPPLER FREQUENCY DETECTOR USING SEMIINSULATING GAAS SEMICONDUCTOR-METAL FIELD-EFFECT TRANSISTORS

Authors
WANG CC LINKE RA TRIVEDI S
Citation
Cc. Wang et al., TUNABLE OPTICAL DOPPLER FREQUENCY DETECTOR USING SEMIINSULATING GAAS SEMICONDUCTOR-METAL FIELD-EFFECT TRANSISTORS, Electronics Letters, 33(21), 1997, pp. 1827-1828
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
21
Year of publication
1997
Pages
1827 - 1828
Database
ISI
SICI code
0013-5194(1997)33:21<1827:TODFDU>2.0.ZU;2-F
Abstract
A tunable optical Doppler frequency detector is demonstrated in semi-i nsulating GaAs metal-semiconductor field-effect transistors (MESFET) b ased on moving space charge field effects. The application of the gate bias voltage, which modifies the free carrier density in the conducti ng channel of the device, modulates both the response time as well as the magnitude of the photocurrent generated by non-stationary optical interference patterns.