6W CW FRONT-FACET POWER FROM SHORT-CAVITY (0.5 MM), 100-MU-M STRIPE AL-FREE 0.98-MU-M-EMITTING DIODE-LASERS

Authors
BOTEZ D MAWST LJ BHATTACHARYA A LOPEZ J LI J KUECH TF IAKOVLEV VP SURUCEANU GI CALIMAN A SYRBU AV MORRIS J
Citation
D. Botez et al., 6W CW FRONT-FACET POWER FROM SHORT-CAVITY (0.5 MM), 100-MU-M STRIPE AL-FREE 0.98-MU-M-EMITTING DIODE-LASERS, Electronics Letters, 33(24), 1997, pp. 2037-2039
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
24
Year of publication
1997
Pages
2037 - 2039
Database
ISI
SICI code
0013-5194(1997)33:24<2037:6CFPFS>2.0.ZU;2-2
Abstract
100 mu m stripe, 500 mu m long InGaAs/InGaP/GaAs facet-coated diode la sers of low series resistance R-s (0.09 Ohm) emit up to 6W CW output p ower from their front facets. Comparison with previously published dat a indicates that for low R-s (less than or equal to 0.10 Ohm) devices, the internal power density al catastrophic optical-mirror damage ((P) over bar(COMD)) is independent of device length, agreeing closely wit h theory.