EFFECT OF SATURATION CAUSED BY AMPLIFIED SPONTANEOUS EMISSION ON SEMICONDUCTOR OPTICAL AMPLIFIER PERFORMANCE

Authors
LIU T OBERMANN K PETERMANN K GIRARDIN F GUEKOS G
Citation
T. Liu et al., EFFECT OF SATURATION CAUSED BY AMPLIFIED SPONTANEOUS EMISSION ON SEMICONDUCTOR OPTICAL AMPLIFIER PERFORMANCE, Electronics Letters, 33(24), 1997, pp. 2042-2043
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
24
Year of publication
1997
Pages
2042 - 2043
Database
ISI
SICI code
0013-5194(1997)33:24<2042:EOSCBA>2.0.ZU;2-7
Abstract
The authors have investigated theoretically the effect of amplified sp ontaneous emission (ASE) on the spatial distribution of the carrier de nsity. Measures of the semiconductor optical amplifier (SOA) performan ce, such as gain, saturation power and noise figure are derived. It is shown that the saturation due to the ASE strongly affects the SOA per formance for device lengths > 500 mu m. The results are compared with experimental data and found to be in good agreement.