INP-BASED MIXED DEVICE (HEMT HBT) TECHNOLOGY ON PLANAR SUBSTRATE FOR HIGH-PERFORMANCE MIXED-SIGNAL AND OPTOELECTRONIC CIRCUITS/

The authors report the first successful demonstration of an integrated circuit process on planar InP substrates that incorporates a stacked single layer MBE growth of HEMTs and HBTs. In this process, the HBT la yers are patterned and selectively wet etched to expose the HEMT layer s after the MBE growth is completed. The authors report functional HEM Ts and HBTs on the same wafer, with pertinent DC and microwave measure ments.