INXGA1-XN ALYGA1-YN VIOLET LIGHT-EMITTING-DIODES WITH REFLECTIVE P-CONTACTS FOR HIGH SINGLE-SIDED LIGHT EXTRACTION/

Authors
MENSZ PM KELLAWON P VANROIJEN R KOZODOY P DENBAARS S
Citation
Pm. Mensz et al., INXGA1-XN ALYGA1-YN VIOLET LIGHT-EMITTING-DIODES WITH REFLECTIVE P-CONTACTS FOR HIGH SINGLE-SIDED LIGHT EXTRACTION/, Electronics Letters, 33(24), 1997, pp. 2066-2068
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
24
Year of publication
1997
Pages
2066 - 2068
Database
ISI
SICI code
0013-5194(1997)33:24<2066:IAVLWR>2.0.ZU;2-7
Abstract
InGaN/AlGaN light emitting diode structures (LED) grown epitaxially on sapphire substrates were on-wafer characterised electrically and opti cally. By replacing standard Ni/Au contacts to p-GaN with Ni/Al layers , the LED output power emission through the sapphire substrate was enh anced by a factor of 2-4, with no significant impact on the operating voltage.