LOW POLARIZATION SENSITIVITY ELECTROABSORPTION MODULATORS FOR 160GBITS NETWORKS/

Citation
Dg. Moodie et al., LOW POLARIZATION SENSITIVITY ELECTROABSORPTION MODULATORS FOR 160GBITS NETWORKS/, Electronics Letters, 33(24), 1997, pp. 2068-2070
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
33
Issue
24
Year of publication
1997
Pages
2068 - 2070
Database
ISI
SICI code
0013-5194(1997)33:24<2068:LPSEMF>2.0.ZU;2-R
Abstract
Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorpt ion modulators employing a novel ridged deeply etched buried heterostr ucture design are described. The feasibility of using them in 160Gbit/ s OTDM systems is experimentally assessed.