CURRENT GAIN IN AMORPHOUS-SILICON HOT-ELECTRON DEVICES

Authors
SHANNON JM KOVSARIAN A CURRAN JE
Citation
Jm. Shannon et al., CURRENT GAIN IN AMORPHOUS-SILICON HOT-ELECTRON DEVICES, Electronics Letters, 33(24), 1997, pp. 2074-2075
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
24
Year of publication
1997
Pages
2074 - 2075
Database
ISI
SICI code
0013-5194(1997)33:24<2074:CGIAHD>2.0.ZU;2-N
Abstract
Useful current gains have been obtained from hydrogenated amorphous si licon structures containing narrow amorphous silicide base regions. Th e current gains have been determined from amplification of junction le akage and photo-currents with the base open-circuited. The measurement s are consistent with efficient transport of hot electrons across an a morphous silicide base a few nanometres thick.