SUPPRESSION OF BORON PENETRATION BY USING INDUCTIVE-COUPLING-NITROGEN-PLASMA IN STACKED AMORPHOUS POLYSILICON GATE STRUCTURE/

Authors
YANG WL LIN CJ CHAO TS LIU DG LEI TF
Citation
Wl. Yang et al., SUPPRESSION OF BORON PENETRATION BY USING INDUCTIVE-COUPLING-NITROGEN-PLASMA IN STACKED AMORPHOUS POLYSILICON GATE STRUCTURE/, Electronics Letters, 33(13), 1997, pp. 1139-1140
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
13
Year of publication
1997
Pages
1139 - 1140
Database
ISI
SICI code
0013-5194(1997)33:13<1139:SOBPBU>2.0.ZU;2-O
Abstract
A method is introduced for suppressing the penetration of boron for BF 2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gale oxide is large ly suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Q(bd) thr ee times higher than for the control samples.