GAS-SOURCE MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF HIGHLY-REFLECTIVE INGAASP INP MULTILAYER BRAGG MIRRORS FOR 1.31-MU-M VERTICAL-CAVITY LASERS/

Authors
SALET P PAGNODROSSIAUX P GABORIT F PLAIS A JACQUET J
Citation
P. Salet et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF HIGHLY-REFLECTIVE INGAASP INP MULTILAYER BRAGG MIRRORS FOR 1.31-MU-M VERTICAL-CAVITY LASERS/, Electronics Letters, 33(13), 1997, pp. 1145-1147
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
13
Year of publication
1997
Pages
1145 - 1147
Database
ISI
SICI code
0013-5194(1997)33:13<1145:GMEAOC>2.0.ZU;2-F
Abstract
A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 mu m. The control of both layer compositions and thicknes ses over 2in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivit y of 99.6% using a VW technique was recorded on a Pt/Au metallised 40- period mirror.