INGAAS INP PIN PHOTODIODE ARRAYS ON ALGAAS/GAAS WAVE-GUIDE FILMS BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/

Authors
HSU SH JOHNSON FG TABATABAEI SA AGARWALA S HRYNIEWICZ JV TOWNER FJ CHEN YJ STONE DR
Citation
Sh. Hsu et al., INGAAS INP PIN PHOTODIODE ARRAYS ON ALGAAS/GAAS WAVE-GUIDE FILMS BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Electronics Letters, 33(13), 1997, pp. 1171-1173
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
13
Year of publication
1997
Pages
1171 - 1173
Database
ISI
SICI code
0013-5194(1997)33:13<1171:IIPPAO>2.0.ZU;2-G
Abstract
The first solid-source molecular beam epitaxial growth of infrared-sen sitive In0.53Ga0.47As on top of an AlGaAs/GaAs waveguide for monolithi c 1.55 mu m receiver applications has been demonstrated using a single , thin InP buffer layer to suppress dislocations. Mesa-type detector a rrays were made by chemically assisted ion beam etching. Using a novel dense array fabrication technique, the integration of InGaAs optoelec tronic devices with AlGaAs/GaAs waveguide films grown on a GaAs substr ate has been demonstrated.