SUBMICROMETER ELEVATED SOURCE AND DRAIN MOSFET TECHNOLOGY USING E-BEAM EVAPORATED SILICON

Authors
MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ
Citation
Mr. Mirabedini et al., SUBMICROMETER ELEVATED SOURCE AND DRAIN MOSFET TECHNOLOGY USING E-BEAM EVAPORATED SILICON, Electronics Letters, 33(13), 1997, pp. 1183-1184
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
13
Year of publication
1997
Pages
1183 - 1184
Database
ISI
SICI code
0013-5194(1997)33:13<1183:SESADM>2.0.ZU;2-L
Abstract
A self-aligned MOSFET structure with elevated source and drain was fab ricated using electron beam evaporation of silicon. This technology al lows the realisation of defect-free junctions as shallow as 200 Angstr om without preamorphisation, source/drain and gale regions doped in on e implantation step and without a selective growth process, and source /drain regions with minimum areas and reduced junction capacitances.