DEPOSITION OF C-BN FILMS BY DC MAGNETRON SPUTTERING

New results of the deposition of cubic boron nitride (c-BN)films by us e of DC magnetron sputtering will be presented. This technique is of g reat interest for industrial applications, because of its high growth rates and upscaling potential. Boron carbide was used as target materi al with a suitable electrical conductivity for DC sputtering. The targ et as well as the substrate holder were connected to DC power. In the experimental ser-up we used tile unbalanced magnetron mode (UBM) attai ned with a magnetic coil surrounding the substrate table. A c-BN depos ition process was developed based on a parameter transfer from a RF di ode system. The c-BN cement of the films will be discussed in relation to the different process parameters. Important process parameters for the formation of the cubic phase were the ion current ar the substrat e table and the insulting ratio of ions to neutrals. Nearly single pha se c-BN films were deposited on silicon and steel substrates. Thr elem ental film composition and the film structure wen characterized by ele ctron probe microanalysis (EPMA). X-ray photoelectron spectroscopy (XP S) and infrared spectroscopy (IR). Nanoindentation and friction coeffi cient measurements revealed excellent mechanical and tribological prop erties of tile films. (C) 1998 Elsevier Science S.A.