SYNTHESIS AND PROPERTIES OF N-TYPE DOPED SEMICONDUCTING MATERIALS

Citation
Kh. Chmil et al., SYNTHESIS AND PROPERTIES OF N-TYPE DOPED SEMICONDUCTING MATERIALS, Synthetic metals, 84(1-3), 1997, pp. 387-388
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
ISSN journal
03796779
Volume
84
Issue
1-3
Year of publication
1997
Pages
387 - 388
Database
ISI
SICI code
0379-6779(1997)84:1-3<387:SAPOND>2.0.ZU;2-#
Abstract
The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar sta bility to p-doped polymers, such as polypyrrole or polyaniline, are kn own. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0. 5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(t hia)diazoles, are presently synthesized for this purpose to demonstrat e the correlation between conjugation length and observed redox potent ial.