OHMIC I-V CHARACTERISTICS IN SEMIINSULATING SEMICONDUCTOR DIODES

Citation
Bk. Jones et al., OHMIC I-V CHARACTERISTICS IN SEMIINSULATING SEMICONDUCTOR DIODES, Solid state communications, 105(9), 1998, pp. 547-549
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
105
Issue
9
Year of publication
1998
Pages
547 - 549
Database
ISI
SICI code
0038-1098(1998)105:9<547:OICISS>2.0.ZU;2-7
Abstract
The contact made between a semi-insulating semiconductor and a metal ( Schottky diode) or a low resistance semiconductor (bipolar diode) ofte n gives an Ohmic I-V characteristic. This can be explained by standard relaxation semiconductor theory without the need for any special assu mptions and the electrical properties can be predicted. These include the measured material resistivity, the temperature coefficient, the de partures from the Ohmic character and possible negative capacitance ef fects. There are technological implications for devices using semi-ins ulating materials, such as MESFETs. (C) 1998 Elsevier Science Ltd.