The contact made between a semi-insulating semiconductor and a metal (
Schottky diode) or a low resistance semiconductor (bipolar diode) ofte
n gives an Ohmic I-V characteristic. This can be explained by standard
relaxation semiconductor theory without the need for any special assu
mptions and the electrical properties can be predicted. These include
the measured material resistivity, the temperature coefficient, the de
partures from the Ohmic character and possible negative capacitance ef
fects. There are technological implications for devices using semi-ins
ulating materials, such as MESFETs. (C) 1998 Elsevier Science Ltd.