DEFECT STATE EMISSION IN ALPHA-SEXITHIOPHENE SINGLE-CRYSTAL

Authors
MUCCINI M LUNEDEI E TALIANI C GARNIER F BAESSLER H
Citation
M. Muccini et al., DEFECT STATE EMISSION IN ALPHA-SEXITHIOPHENE SINGLE-CRYSTAL, Synthetic metals, 84(1-3), 1997, pp. 599-600
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
84
Issue
1-3
Year of publication
1997
Pages
599 - 600
Database
ISI
SICI code
0379-6779(1997)84:1-3<599:DSEIAS>2.0.ZU;2-O
Abstract
The optical emission properties of alpha-sexithiophene single crystal have been studied using photoluminescence (PL), time resolved PL and t emperature dependent PL spectroscopy. Contrary to the absorption spect rum the photoluminescence measured on the same sample shows broad and structureless emission with a temperature dependence pointing to therm ally activated defect state emission. The temperature dependence of th e photoluminescence and the time-resolved photoluminescence measuremen ts support this scenario.