The use of different kinds of substrates (SiO2, SiH/Si, HOPG) allows t
o induce orientation and crystalline organization of sexithiophene org
anic films. This substrate behavior IS related to its ability to devel
op interactions with the oligothiophene. Electron diffraction pattern
and TEM analysis demonstrate the existence of an epitaxial relationshi
p between the film organization and the substrate (HOPG, SiH).