Sy. Cho et al., THE OPTIMUM FACET REFLECTIVITIES FOR HIGH-POWER AND HIGHLY RELIABLE OPERATION OF 980-NM INGAAS ALGAAS FP LASER-DIODES/, Journal of the Korean Physical Society, 32(2), 1998, pp. 132-137
980-nm InGaAs/AlGaAs Fabry-Perot ridge waveguide laser diodes were fab
ricated for pumping Er-doped fiber amplifiers (EDFAs). The dependence
of the output power on the facet coatings was investigated theoretical
ly and experimentally. The expected output power was not achieved by d
ecreasing the reflectivity at the front facet. It was found that a lar
ge mirror loss yields an increase in internal loss due to longitudinal
and lateral spatial hole-burnings, which significantly affect the dif
ferential quantum efficiency of the devices. Taking the hole burning e
ffects into account, the front facet reflectivity was optimized so tha
t the operating current was minimum for a given output power.