SEMICONDUCTOR-LASERS

An account is given of the avenues of development of injection heteroj unction lasers (including the use of quantum wells with different spat ial dimensionalities), of mastering the short-wavelength range, and al so of the use of group II-VI compounds and III nitrides. The optical s trength and reliability, nonlinear mode distortions in high-power inje ction lasers, and also semiconductor lasers excited by a scanning elec tron beam are considered. The attention is concentrated on the feasibi lity of efficient operation of such lasers without strong cooling (at room temperatures). The Soviet and Russian contributions to the constr uction and development of semiconductor lasers are stressed.