Singlet excited state reactions in thin films of tris(8-hydroxyquinoli
ne) aluminum (Alq(3)), a well known emitter for organic eledroluminesc
ent devices, are described. Bimolecular recombination dominates the si
nglet exciton decay in pristine films at high intensities, thus decrea
sing the photoluminescence quantum efficiency and singlet lifetime. Th
e measured rate constant of the singlet-singlet annihilation in Alq(3)
films is gamma(SS) = (3.5+/-2.5) X 10(-11) cm(3) s(-1). The value of
the diffusion coefficient of singlet excitons estimated from gamma(SS)
is D-S = (1.2+/-0.8) X 10(-5) cm(2) s(-1).