IR LASER PHOTOSENSITIZED DECOMPOSITION OF TRIMETHYL(2-PROPYNYLOXY)SILANE FOR CHEMICAL-VAPOR-DEPOSITION OF POLYDIMETHYLSILOXANE PHASES

Citation
M. Urbanova et al., IR LASER PHOTOSENSITIZED DECOMPOSITION OF TRIMETHYL(2-PROPYNYLOXY)SILANE FOR CHEMICAL-VAPOR-DEPOSITION OF POLYDIMETHYLSILOXANE PHASES, Journal of analytical and applied pyrolysis, 44(2), 1998, pp. 219-226
Citations number
30
Categorie Soggetti
Spectroscopy,"Chemistry Analytical
ISSN journal
01652370
Volume
44
Issue
2
Year of publication
1998
Pages
219 - 226
Database
ISI
SICI code
0165-2370(1998)44:2<219:ILPDOT>2.0.ZU;2-W
Abstract
The infrared laser-photosensitized (SF6) decomposition of trimethyl(2- propynyloxy)silane (TMPSi) induced by TEA CO2 laser affords a multitud e of unsaturated hydrocarbons and a solid polydimethylsiloxane phase. This process of chemical vapour deposition in which all the silicon of the parent is completely utilised in the formation of the solid phase is briefly compared with UV laser photolysis of TMPSi. (C) 1998 Elsev ier Science B.V.