N. Gayathri et al., ELECTRONIC CONDUCTION IN LANIO3-DELTA - THE DEPENDENCE ON THE OXYGEN STOICHIOMETRY DELTA, Journal of physics. Condensed matter, 10(6), 1998, pp. 1323-1338
We report a systematic study of the electronic transport properties of
the metallic perovskite oxide LaNiO3-delta as a function of the oxyge
n stoichiometry delta (delta less than or equal to 0.14). The electric
al resistivity, magnetoresistance, susceptibility, Hall effect and the
rmopower have been studied, All of the transport coefficients are depe
ndent on the value of delta. The resistivity increases almost exponent
ially as delta increases. We relate this increase in rho to the creati
on of Ni2+ with square-planar coordination. We find that there is a di
stinct T-1.5-contribution to the resistivity over the whole temperatur
e range. The thermopower is negative, as expected for systems with ele
ctrons as the carrier, but the Hall coefficient is positive. We have g
iven a qualitative and quantitative explanation for the different quan
tities observed and their systematic variation with the stoichiometry
delta.