GEOMETRY-INDUCED FRACTAL BEHAVIOR IN A SEMICONDUCTOR BILLIARD

We report geometry-induced fractal behaviour in the low-held magneto-c onductance fluctuations of a mesoscopic semiconductor billiard. Such f ractal behaviour was recently predicted to be induced by the mixed (ch aotic/regular) phase space generated by the soft-walled billiard poten tial, and our results constitute a possible experimental observation o f the infinite hierarchical nature of this mixed phase space. Prelimin ary investigations of the effects of temperature and gate bias, which directly control the electron coherence and billiard potential profile , are presented.