COMMENT ON MONTE-CARLO SIMULATIONS OF THE RECOMBINATION DYNAMICS IN POROUS SILICON

Citation
Lr. Tessler et F. Alvarez, COMMENT ON MONTE-CARLO SIMULATIONS OF THE RECOMBINATION DYNAMICS IN POROUS SILICON, Journal of physics. Condensed matter, 10(6), 1998, pp. 1447-1448
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
10
Issue
6
Year of publication
1998
Pages
1447 - 1448
Database
ISI
SICI code
0953-8984(1998)10:6<1447:COMSOT>2.0.ZU;2-W
Abstract
The results of Monte Carlo simulations of the recombination dynamics i n porous silicon have been used to rule out explanations for porous si licon luminescence based on analogies with a-Si:H. In this comment we present arguments showing that the luminescence process of a-Si:H at l ow temperatures cannot be correctly described by the model system used in the calculations and the results obtained cannot rule out analogie s between porous silicon and a-Si:H.