FACTORS DETERMINING THE DAMAGE COEFFICIENTS AND THE LOW-FREQUENCY NOISE IN MEV PROTON-IRRADIATED SILICON DIODES

In this paper, the factors determining the reverse current and the rec ombination lifetime damage coefficients in high-energy proton-irradiat ed Si junction diodes are studied, These factors are: the particle ene rgy, the crystal growth technique and corresponding starting material quality, and the substrate doping density and type, The observed macro scopic device degradation is discussed in view of the microscopic dama ge factor, the nonionizing energy loss (NIEL), Finally, the impact of proton irradiation on the low-frequency noise in forward operation is reported, Several experimental factors lead to the conclusion that the change in the flicker noise is related to the created ionization dama ge in the lateral oxide isolation at the periphery of the diode rather than to the bulk displacement damage.